1 长春理工大学机电工程学院,吉林 长春 130022
2 长春理工大学高功率半导体激光国家重点实验室,吉林 长春 130022
研究了AlxGa1-xAs/GaAs材料中高Al组份的AlxGa1-xAs层在400~500℃与水汽发生氧化反应的氧化特性。许多影响因素,如待氧化层厚度、组分、氧化温度、气体流量都不同程度影响氧化速率,影响到氧化物限制工艺的整体质量。实验得到AlxGa1-xAs中x值、厚度、氧化温度等因素与氧化速率有关,并发现气流量对AlxGa1-xAs层的氧化过程有重要的影响,实验测定了气流量与AlxGa1-xAs层氧化速率的关系。
氧化物限制 湿法氧化 oxide-confined structure wet oxidation 大气与环境光学学报
2006, 1(1): 0073
National Key Lab of High Power Semiconductor Lasers, Changchun University of Sci. and Technol., Changchun 130022, CHN
Distributed Bragg reflector Photoluminescence Double-crystal X-ray diffraction 半导体光子学与技术
2004, 10(3): 179
Nation. Key Lab. of High Power Semiconductor Lasers, Changchun University of Sci. and Technol., Changchun 130022, CHN
2003-09-15
Temperature characteristic Vertical- cavity surface - emitting lasers Optical losses Laser measurements Laser thermal factors
1 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, CHN
2 Changchun Institute of Optics and Fine Mechanics, National Key Lab. of Semiconductor Lasers, Changchun 130022, CHN
Distributed Bragg reflector Superlattice Reflection spectrum Series resistance Molecular beam epitaxy
1 Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130023, CHN
2 Changchun Institute of Optics and Fine Mechanics, Nat. Key Lab. of Semiconductor Lasers, Changchun 130022, CHN
Thermal interaction Thermal diffusion 2D array Leaky waveguide Semiconductor lasers